Vishay Intertechnology, Inc. FETs - Single - IRF624 IRF624

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187094-IRF624 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Application Field: Used in Industrial Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 4.4A Rds On (Maximum) at Id, Vgs: 1.1Ohm at 2.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V
Request a Quote Datasheet
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187094-IRF624 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Application Field: Used in Industrial Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 4.4A Rds On (Maximum) at Id, Vgs: 1.1Ohm at 2.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF624 - 1187094-IRF624 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF624
1187094-IRF624
FETs - Single - IRF624 1187094-IRF624
Manufacturer: Vishay Siliconix Win Source Part Number: 1187094-IRF624 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Application Field: Used in Industrial Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 4.4A Rds On (Maximum) at Id, Vgs: 1.1Ohm at 2.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187094-IRF624
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 50W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 250V
Id - Continuous Drain Current: 4.4A
Rds On (Maximum) at Id, Vgs: 1.1Ohm at 2.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V

Buy Now
Single FETs, MOSFETs - IRF624-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF624-ND
Single FETs, MOSFETs IRF624-ND
N-Channel 250V 4.4A (Tc) 50W (Tc) Through Hole TO-220AB

N-Channel 250V 4.4A (Tc) 50W (Tc) Through Hole TO-220AB

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 1187094-IRF624 IRF624-ND
Product Name FETs - Single - IRF624 Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 250 volts
PD 50000 milliwatts
Unlock Full Specs
to access all available technical data