Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF620SPBF IRF620SPBF

Description
Manufacturer: Vishay Win Source Part Number: 017445-IRF620SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 260pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 017445-IRF620SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 260pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF620SPBF - 017445-IRF620SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF620SPBF
017445-IRF620SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF620SPBF 017445-IRF620SPBF
Manufacturer: Vishay Win Source Part Number: 017445-IRF620SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 260pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017445-IRF620SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 1808843 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808843
MOSFETs 1808843
N channel ;VBRDSS 200 V; RDSon 800 mOh

N channel ;VBRDSS 200 V; RDSon 800 mOh

Supplier's Site
MOSFETs - 1808301 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808301
MOSFETs 1808301
N channel ;VBRDSS 200 V; RDSon 800 mOh

N channel ;VBRDSS 200 V; RDSon 800 mOh

Supplier's Site
Single FETs, MOSFETs - IRF620SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF620SPBF-ND
Single FETs, MOSFETs IRF620SPBF-ND
N-Channel 200V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF620SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF620SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF620SPBF
MOSFET N-CH 200V 5.2A D2PAK

MOSFET N-CH 200V 5.2A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 200V HEXFET MOSFET D2-PA

MOSFET N-CH 200V HEXFET MOSFET D2-PA

Buy Now Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017445-IRF620SPBF 1808843 IRF620SPBF-ND IRF620SPBF IRF620SPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF620SPBF MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 3000 to 50000 milliwatts
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