N channel ;VBRDSS 200 V; RDSon 800 mOh
N channel ;VBRDSS 200 V; RDSon 800 mOh
Manufacturer: Vishay
Win Source Part Number: 017445-IRF620SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
N-Channel 200V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)
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| RS Components, Ltd. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1808843 | 017445-IRF620SPBF | IRF620SPBF-ND | IRF620SPBF | IRF620SPBF |
| Product Name | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF620SPBF | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | TO-263; TO-263 | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts |
