N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
MOSFET N-Channel 200V 5.2A TO220AB
MOSFET N-Channel 200V 5.2A TO220AB
MOSFET N-CH 200V 5.2A TO220AB
N-CH MOSFET 200V 5.2A 800mR TO-220AB Product overview: IRF620PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF620PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 017444-IRF620PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 260pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 3.1A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 200V, 5.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 5.2 A, 200 V, 800 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 5.2A;TO-220AB;PD 50W;VGS +/-20V
MOSFET N-CH 200V 5.2A TO220AB
| DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF620PBF-ND | 5430052 | IRF620PBF | 278-IRF620PBF | 017444-IRF620PBF | 16357205 | 63J7330 | 38K2812 | IRF620PBF | 70078853 | IRF620PBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | 200V 5.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF620PBF | Transistor | N Channel Mosfet, 200V, 5.2A To-220; Channel Type Vishay | Mosfet Transistor, N Channel, 5.2 A, 200 V, 800 Mohm, 10 V, 4 V Rohs Compliant Vishay | MOSFET | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.8Ohm;ID 5.2A;TO-220AB;PD 50W;VGS +/-20V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-3; TO-220 | TO-3 | TO-220 | TO-220; TO-220-3 | |||
| MOSFET Operating Mode | Enhancement | ||||||||||
| Number of units in IC | 1 | ||||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |