N-Channel 250V 2.7A (Tc) 36W (Tc) Through Hole TO-220AB
Manufacturer: Vishay
Win Source Part Number: 875016-IRF614PBF
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 250 V 2.7A (Tc) 36W (Tc) Through Hole TO-220AB
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: IRF614
Categories: Discrete Semiconductor Products
Case / Package: TO-220AB
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 50 Weeks
HTSUS: 8541.29.0095
MOSFET N-CH 250V 2.7A TO220AB Product overview: IRF614PBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 2.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 2.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF614PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 250V 2.7A TO220AB
MOSFET N-CH 250V 2.7A TO-220AB
N CHANNEL MOSFET, 250V, 2.7A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:2.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF614PBF-ND | 875016-IRF614PBF | 278-IRF614PBF | IRF614PBF | 880-IRF614PBF | IRF614PBF | 63J7329 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF614PBF | 250V 2.7A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 250V 2.7A TO-220AB | MOSFET | N Channel Mosfet, 250V, 2.7A To-220; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | Tube | -55degC ~ 150degC (TJ) | TO-3; TO-220 | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 36 milliwatts | 36000 milliwatts |
