Vishay Intertechnology, Inc. FETs - Single - IRF610STRL IRF610STRL

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 718700-IRF610STRL Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3W, 36W Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 3.3A Rds On (Maximum) at Id, Vgs: 1.5Ohm at 2A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 718700-IRF610STRL Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3W, 36W Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 3.3A Rds On (Maximum) at Id, Vgs: 1.5Ohm at 2A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V
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FETs - Single - IRF610STRL - 718700-IRF610STRL - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF610STRL
718700-IRF610STRL
FETs - Single - IRF610STRL 718700-IRF610STRL
Manufacturer: Vishay Siliconix Win Source Part Number: 718700-IRF610STRL Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3W, 36W Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 3.3A Rds On (Maximum) at Id, Vgs: 1.5Ohm at 2A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 718700-IRF610STRL
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3W, 36W
Popularity: Low
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 3.3A
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V

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MOSFET N-CH 200V 3.3A D2PAK - 880-IRF610STRL - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 3.3A D2PAK
880-IRF610STRL
MOSFET N-CH 200V 3.3A D2PAK 880-IRF610STRL
MOSFET N-CH 200V 3.3A D2PAK

MOSFET N-CH 200V 3.3A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 718700-IRF610STRL 880-IRF610STRL
Product Name FETs - Single - IRF610STRL MOSFET N-CH 200V 3.3A D2PAK
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 3000 to 36000 milliwatts 3000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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