N-Channel 200V 3.3A (Tc) 3W (Ta), 36W (Tc) Surface Mount D²PAK (TO-263)
N-Channel MOSFET, 200V, 3.3A, 1.5R, D2PAK Product overview: IRF610SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF610SPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1046523-IRF610SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 140pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 200V HEXFET MOSFET D2-PA
MOSFET N-CH 200V 3.3A D2PAK
MOSFET, N-CH, 200V, 3.3A, TO-263 ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF610SPBF-ND | 278-IRF610SPBF | 2567273 | 1046523-IRF610SPBF | IRF610SPBF | IRF610SPBF | 56AJ9913 |
| Product Name | Single FETs, MOSFETs | N-Channel 200V 3.3A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF610SPBF | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 3.3A, To-263 Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263 | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | ||
| PD | 3000 milliwatts | 3000 to 36000 milliwatts |
