N-Channel 200V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB
N-Channel MOSFET, 200V, 3.3A, 1.5R, TO-220AB Product overview: IRF610PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF610PBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 017443-IRF610PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 140pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2A, 10V
Alternative Parts (Cross-Reference): FQP5N20L; STP4N20; VN1220N5; IRF610PBF;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
MOSFET N-Channel 200V 3.3A TO220AB
MOSFET N-Channel 200V 3.3A TO220AB
MOSFET N-CH 200V 3.3A TO220AB
MOSFET Transistor, N Channel, 3.3 A, 200 V, 1.5 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 3.3A;TO-220AB;PD 36W;VGS +/-20V
MOSFET N-CH 200V 3.3A TO220AB
200V 3.3A 1.5Ω@10V,2A 36W 4V@250uA N Channel TO-220AB MOSFETs ROHS
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF610PBF-ND | 278-IRF610PBF | 017443-IRF610PBF | 5430046 | IRF610PBF | IRF610PBF | 38K2811 | 70078852 | IRF610PBF | IRF610PBF |
| Product Name | Single FETs, MOSFETs | N-Channel 200V 3.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF610PBF | MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 3.3 A, 200 V, 1.5 Ohm, 10 V, 4 V Rohs Compliant Vishay | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 3.3A;TO-220AB;PD 36W;VGS +/-20V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; To-220ab | TO-220; TO-220-3 | TO-3 | TO-220 | TO-220; TO-220-3 | TO-220 | ||
| PD | 36000 milliwatts | 36000 milliwatts | 36000 milliwatts | 36000 milliwatts | 36000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts |
