N-Channel 200V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB
MOSFET, N-CH, 200V, 3.3A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 200V 3.3A TO220AB
| DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 742-IRF610PBF-BE3-ND | 78AH6377 | IRF610PBF-BE3 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 200V, 3.3A, To-220Ab; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
