Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540SPBF IRF540SPBF

Description
Manufacturer: Vishay Win Source Part Number: 205298-IRF540SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 72nC @ 10V Max Input Capacitance: 1700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 77 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Application Field: Used in Power Management
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    Win Source Electronics
  • Single FETs, MOSFETs - IRF540SPBF-ND - DigiKey
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  • Single FETs, MOSFETs - IRF540SPBF - ODG (Origin Data Global)
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  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF540SPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 16357157 - Radwell International
    Radwell International
  • Mosfet Transistor, N Channel, 28 A, 100 V, 77 Mohm, 10 V, 4 V Rohs Compliant Vishay - 97K2097 - Newark, An Avnet Company
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Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 205298-IRF540SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 72nC @ 10V Max Input Capacitance: 1700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 77 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Application Field: Used in Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540SPBF - 205298-IRF540SPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540SPBF
205298-IRF540SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540SPBF 205298-IRF540SPBF
Manufacturer: Vishay Win Source Part Number: 205298-IRF540SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 72nC @ 10V Max Input Capacitance: 1700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 77 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 205298-IRF540SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 1700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 77 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IRF540SPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF540SPBF-ND
Single FETs, MOSFETs IRF540SPBF-ND
N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - IRF540SPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF540SPBF
Single FETs, MOSFETs IRF540SPBF
MOSFET N-CH 100V 28A D2PAK

MOSFET N-CH 100V 28A D2PAK

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF540SPBF
MOSFET IRF540SPBF
MOSFET N-CH 100V HEXFET MOSFET D2-PA

MOSFET N-CH 100V HEXFET MOSFET D2-PA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF540SPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF540SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF540SPBF
MOSFET N-CH 100V 28A D2PAK

MOSFET N-CH 100V 28A D2PAK

Supplier's Site
Transistor - 16357157 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16357157
Transistor 16357157
N CHANNEL MOSFET, 100V, 28A, D2-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:28A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(ON):0.077OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 100V, 28A, D2-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:28A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(ON):0.077OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Mosfet Transistor, N Channel, 28 A, 100 V, 77 Mohm, 10 V, 4 V Rohs Compliant Vishay - 97K2097 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 28 A, 100 V, 77 Mohm, 10 V, 4 V Rohs Compliant Vishay
97K2097
Mosfet Transistor, N Channel, 28 A, 100 V, 77 Mohm, 10 V, 4 V Rohs Compliant Vishay 97K2097
MOSFET Transistor, N Channel, 28 A, 100 V, 77 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 28 A, 100 V, 77 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205298-IRF540SPBF IRF540SPBF-ND IRF540SPBF IRF540SPBF IRF540SPBF 16357157 97K2097
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540SPBF Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor Mosfet Transistor, N Channel, 28 A, 100 V, 77 Mohm, 10 V, 4 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 3700 to 150000 milliwatts 3700 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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