Manufacturer: Vishay
Win Source Part Number: 017437-IRF540PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Family Name: IRF540
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 1700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 77 mOhm @ 17A, 10V
Alternative Parts (Cross-Reference): NTE2396; IRF540; IRF540FI; STP22NE10L;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China, Israel, Mexico, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
N-Channel 100V 28A (Tc) 150W (Tc) Through Hole TO-220AB
MOSFET N-CH 100V 28A TO220AB
MOSFET, N-CHANNEL, 100V, 28A (TC), 150W (TC), THROUGH HOLE, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 28A TO220AB
N CHANNEL MOSFET, 100V, 28A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 28 A, 100 V, 77 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.077Ohm;ID 28A;TO-220AB;PD 150W;VGS +/-20V
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017437-IRF540PBF | IRF540PBF-ND | IRF540PBF | 16357153 | IRF540PBF | 63J7322 | 68X2853 | IRF540PBF | 70078851 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF540PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 100V, 28A, To-220Ab; Channel Type Vishay | Mosfet Transistor, N Channel, 28 A, 100 V, 77 Mohm, 10 V, 4 V Rohs Compliant Vishay | MOSFET | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.077Ohm;ID 28A;TO-220AB;PD 150W;VGS +/-20V |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | 1700 pF @ 25 V | TO-3; TO-220 | TO-3 | TO-220 |
