Vishay Precision Group N Channel Mosfet, 100V, 28A, To-220Ab; Channel Type Vishay IRF540PBF.

Description
N CHANNEL MOSFET, 100V, 28A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
Description
N CHANNEL MOSFET, 100V, 28A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
Datasheet
Datasheet Summary
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The IRF540PBF is a silicon N-channel MOSFET in a TO-220AB package, designed for commercial-industrial applications with power dissipation up to 50 W. It has a drain-source voltage rating of 100 V, a continuous drain current of 28 A at 25 °C, and a maximum on-state resistance of 0.077 Ω at a gate-source voltage of 10 V. The device supports repetitive avalanche current up to 28 A and repetitive avalanche energy of 15 mJ. It features a maximum junction temperature of 175 °C, a dynamic dV/dt rating of 5.5 V/ns, and a total gate charge of 72 nC. The package has a maximum junction-to-case thermal resistance of 1.0 °C/W and is RoHS compliant due to its lead-free terminations.

Datasheet Summary
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The IRF540PBF is a silicon N-channel MOSFET in a TO-220AB package, designed for commercial-industrial applications with power dissipation up to 50 W. It has a drain-source voltage rating of 100 V, a continuous drain current of 28 A at 25 °C, and a maximum on-state resistance of 0.077 Ω at a gate-source voltage of 10 V. The device supports repetitive avalanche current up to 28 A and repetitive avalanche energy of 15 mJ. It features a maximum junction temperature of 175 °C, a dynamic dV/dt rating of 5.5 V/ns, and a total gate charge of 72 nC. The package has a maximum junction-to-case thermal resistance of 1.0 °C/W and is RoHS compliant due to its lead-free terminations.

Suppliers

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Supplier Links
N Channel Mosfet, 100V, 28A, To-220Ab; Channel Type Vishay - 26AC0598 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 28A, To-220Ab; Channel Type Vishay
26AC0598
N Channel Mosfet, 100V, 28A, To-220Ab; Channel Type Vishay 26AC0598
N CHANNEL MOSFET, 100V, 28A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No

N CHANNEL MOSFET, 100V, 28A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 26AC0598
Product Name N Channel Mosfet, 100V, 28A, To-220Ab; Channel Type Vishay
Polarity N-Channel
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