N-Channel 100V 14A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 14A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 14A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 100V 14A D2PAK
Manufacturer: Vishay
Win Source Part Number: 126477-IRF530STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 670pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 14A D2PAK
MOSFET, N CHANNEL, 100V, 14A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 14A SMD-220, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4VRoHS Compliant: Yes
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF530STRLPBFTR-ND | IRF530STRLPBF | 126477-IRF530STRLPBF | IRF530STRLPBF | 05W6867 | 41K2309 | 880-IRF530STRLPBF | IRF530STRLPBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530STRLPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 100V, 14A, To-263-3; Channel Type Vishay | N Channel Mosfet, 100V, 14A Smd-220, Full Reel; Channel Type Vishay | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| IDSS | 14000 milliamps | 14000 milliamps | 14000 milliamps |
