Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530SPBF IRF530SPBF

Description
Manufacturer: Vishay Win Source Part Number: 205297-IRF530SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 205297-IRF530SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530SPBF - 205297-IRF530SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530SPBF
205297-IRF530SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530SPBF 205297-IRF530SPBF
Manufacturer: Vishay Win Source Part Number: 205297-IRF530SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 205297-IRF530SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 670pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRF530SPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF530SPBF
Single FETs, MOSFETs IRF530SPBF
MOSFET N-CH 100V 14A TO263

MOSFET N-CH 100V 14A TO263

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF530SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF530SPBF-ND
Single FETs, MOSFETs IRF530SPBF-ND
N-Channel 100V 14A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 14A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
MOSFETs - 1808828 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808828
MOSFETs 1808828
N channel ;VBRDSS 100 V; RDSon 160 mOh

N channel ;VBRDSS 100 V; RDSon 160 mOh

Supplier's Site
MOSFETs - 1808299 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808299
MOSFETs 1808299
N channel ;VBRDSS 100 V; RDSon 160 mOh

N channel ;VBRDSS 100 V; RDSon 160 mOh

Supplier's Site
Singapore
N-Channel 100V 14A MOSFET Transistor
278-IRF530SPBF
N-Channel 100V 14A MOSFET Transistor 278-IRF530SPBF
N-Channel MOSFET, 100V, 14A, 160mR Rds(on), TO-263 Product overview: IRF530SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF530SPBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 100V, 14A, 160mR Rds(on), TO-263 Product overview: IRF530SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF530SPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 100V HEXFET MOSFET D2-PA

MOSFET N-CH 100V HEXFET MOSFET D2-PA

Buy Now Datasheet
N Channel Mosfet, 100V, 14A, D2-Pak; Channel Type Vishay - 41K2308 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 14A, D2-Pak; Channel Type Vishay
41K2308
N Channel Mosfet, 100V, 14A, D2-Pak; Channel Type Vishay 41K2308
N CHANNEL MOSFET, 100V, 14A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 14A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF530SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF530SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF530SPBF
MOSFET N-CH 100V 14A TO263

MOSFET N-CH 100V 14A TO263

Supplier's Site
Transistor - 16357145 - Radwell International
Willingboro, NJ, United States
Transistor
16357145
Transistor 16357145
POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 100V, 0.16OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 100V, 0.16OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey RS Components, Ltd. ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 205297-IRF530SPBF IRF530SPBF IRF530SPBF-ND 1808828 278-IRF530SPBF IRF530SPBF 41K2308 IRF530SPBF 16357145
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF530SPBF Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs N-Channel 100V 14A MOSFET Transistor MOSFET N Channel Mosfet, 100V, 14A, D2-Pak; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 3700 to 88000 milliwatts 3700 milliwatts 3700 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F)
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