Vishay Intertechnology, Inc. N-Channel 9.2A 100V 0.27ohm MOSFET Transistor IRF520SPBF

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Product overview: IRF520SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 9.2A, 100V, 0.27ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 9.2A, 100V, 0.27ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF520SPBF can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 104337-IRF520SPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 270 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

N-Channel 100V 9.2A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D2PAK