Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF510STRRPBF

MOSFET N-CH 100V 5.6A TO263

N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

N-Channel MOSFET, 100V, 5.6A, 540mR Rds On, TO-263 Product overview: IRF510STRRPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF510STRRPBF can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 1046501-IRF510STRRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance