Manufacturer: Vishay
Win Source Part Number: 069288-IRF510SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)
N-Channel MOSFET, 100V, 5.6A, 540mR Rds On, D2PAK Product overview: IRF510SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF510SPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 5.6A D2PAK
MOSFET Transistor, N Channel, 5.6 A, 100 V, 540 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET TRANSISTOR, N CHANNEL, 5.6 A, 100 V, 540 MOHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 069288-IRF510SPBF | 1780860 | IRF510SPBF-ND | 278-IRF510SPBF | IRF510SPBF | IRF510SPBF | 38K2798 | 16357121 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF510SPBF | MOSFETs | Single FETs, MOSFETs | N-Channel 100V 5.6A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 5.6 A, 100 V, 540 Mohm, 10 V, 4 V Rohs Compliant Vishay | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | |||||||
| PD | 3700 to 43000 milliwatts | 3700 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
