Vishay Precision Group 100V 5.6A MOSFET Transistor IRF510PBF

Description
MOSFET N-CH 100V 5.6A 540mR TO-220AB Product overview: IRF510PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF510PBF can be used for catalog matching and distributor lookup.
  • Single FETs, MOSFETs - IRF510PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRF510PBF-ND - DigiKey
    DigiKey
  • MOSFETs - 7085134 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 9190023 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 7085134P - RS Components, Ltd.
    RS Components, Ltd.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF510PBF - 017432-IRF510PBF - Win Source Electronics
    Win Source Electronics
  • Transistor - 16357117 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF510PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 100V, 5.6A To-220; Channel Type Vishay - 63J7301 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-20V - 70078850 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
MOSFET N-CH 100V 5.6A 540mR TO-220AB Product overview: IRF510PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF510PBF can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
100V 5.6A MOSFET Transistor
278-IRF510PBF
100V 5.6A MOSFET Transistor 278-IRF510PBF
MOSFET N-CH 100V 5.6A 540mR TO-220AB Product overview: IRF510PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF510PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 5.6A 540mR TO-220AB Product overview: IRF510PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF510PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF510PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF510PBF
Single FETs, MOSFETs IRF510PBF
MOSFET N-CH 100V 5.6A TO220AB

MOSFET N-CH 100V 5.6A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF510PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF510PBF-ND
Single FETs, MOSFETs IRF510PBF-ND
N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB

N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFETs - 7085134 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7085134
MOSFETs 7085134
MOSFET N-Channel 100V 5.6A TO220AB

MOSFET N-Channel 100V 5.6A TO220AB

Supplier's Site
MOSFETs - 9190023 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9190023
MOSFETs 9190023
MOSFET N-Channel 100V 5.6A TO220AB

MOSFET N-Channel 100V 5.6A TO220AB

Supplier's Site
MOSFETs - 7085134P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7085134P
MOSFETs 7085134P
MOSFET N-Channel 100V 5.6A TO220AB

MOSFET N-Channel 100V 5.6A TO220AB

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF510PBF - 017432-IRF510PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF510PBF
017432-IRF510PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF510PBF 017432-IRF510PBF
Manufacturer: Vishay Win Source Part Number: 017432-IRF510PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 43W (Tc) Family Name: IRF510 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.3nC @ 10V Max Input Capacitance: 180pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 10V Alternative Parts (Cross-Reference): IRF510; IRF510_NL; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 017432-IRF510PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 43W (Tc)
Family Name: IRF510
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.3nC @ 10V
Max Input Capacitance: 180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 540 mOhm @ 3.4A, 10V
Alternative Parts (Cross-Reference): IRF510; IRF510_NL;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Transistor - 16357117 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16357117
Transistor 16357117
POWER FIELD-EFFECT TRANSISTOR, 5.6A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 5.6A I(D), 100V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF510PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF510PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF510PBF
MOSFET N-CH 100V 5.6A TO220AB

MOSFET N-CH 100V 5.6A TO220AB

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF510PBF
Triode/MOS Tube/Transistor >> MOSFETs IRF510PBF
100V 5.6A 540mΩ@3.4A,10V 43W 4V@250uA null TO-220AB-3 MOSFETs ROHS

100V 5.6A 540mΩ@3.4A,10V 43W 4V@250uA null TO-220AB-3 MOSFETs ROHS

Supplier's Site Datasheet
N Channel Mosfet, 100V, 5.6A To-220; Channel Type Vishay - 63J7301 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 5.6A To-220; Channel Type Vishay
63J7301
N Channel Mosfet, 100V, 5.6A To-220; Channel Type Vishay 63J7301
N CHANNEL MOSFET, 100V, 5.6A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 5.6A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-20V - 70078850 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-20V
70078850
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-20V 70078850
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-20V

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-20V

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF510PBF
MOSFET IRF510PBF
MOSFET N-CH 100V HEXFET MOSFET D2-PA

MOSFET N-CH 100V HEXFET MOSFET D2-PA

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey RS Components, Ltd. RS Components, Ltd. Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Allied Electronics, Inc. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-IRF510PBF IRF510PBF IRF510PBF-ND 7085134 7085134P 017432-IRF510PBF 16357117 IRF510PBF IRF510PBF 63J7301 70078850 IRF510PBF
Product Name 100V 5.6A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF510PBF Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs N Channel Mosfet, 100V, 5.6A To-220; Channel Type Vishay MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.54Ohm;ID 5.6A;TO-220AB;PD 43W;VGS +/-20V MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
PD 43000 milliwatts 43000 milliwatts 43000 milliwatts 43000 milliwatts 43000 milliwatts
TJ -55 C (-67 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts 100 volts 100 volts
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