Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC644PBF IRC644PBF

Description
Manufacturer: Vishay Win Source Part Number: 1046381-IRC644PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-5 Dimension: TO-220-5 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1046381-IRC644PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-5 Dimension: TO-220-5 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC644PBF - 1046381-IRC644PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC644PBF
1046381-IRC644PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC644PBF 1046381-IRC644PBF
Manufacturer: Vishay Win Source Part Number: 1046381-IRC644PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-5 Dimension: TO-220-5 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046381-IRC644PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Current Sensing
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-5
Dimension: TO-220-5
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRC644PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRC644PBF
MOSFET N-CH 250V 14A TO220-5

MOSFET N-CH 250V 14A TO220-5

Supplier's Site
Trans MOSFET N-CH 250V 14A 5-Pin(5+Tab) TO-220 - 880-IRC644PBF - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 250V 14A 5-Pin(5+Tab) TO-220
880-IRC644PBF
Trans MOSFET N-CH 250V 14A 5-Pin(5+Tab) TO-220 880-IRC644PBF
Trans MOSFET N-CH 250V 14A 5-Pin(5+Tab) TO-220

Trans MOSFET N-CH 250V 14A 5-Pin(5+Tab) TO-220

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046381-IRC644PBF IRC644PBF 880-IRC644PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC644PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET N-CH 250V 14A 5-Pin(5+Tab) TO-220
Polarity N-Channel; N-Channel
V(BR)DSS 250 volts 250 volts
PD 125000 milliwatts 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220-5 TO-220; TO-220-5
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