Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC640PBF IRC640PBF

Description
Manufacturer: Vishay Win Source Part Number: 1046380-IRC640PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-5 Dimension: TO-220-5 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1046380-IRC640PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-5 Dimension: TO-220-5 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC640PBF - 1046380-IRC640PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC640PBF
1046380-IRC640PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC640PBF 1046380-IRC640PBF
Manufacturer: Vishay Win Source Part Number: 1046380-IRC640PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-5 Dimension: TO-220-5 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046380-IRC640PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Current Sensing
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-5
Dimension: TO-220-5
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRC640PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRC640PBF
MOSFET N-CH 200V 18A TO220-5

MOSFET N-CH 200V 18A TO220-5

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046380-IRC640PBF IRC640PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC640PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 125000 milliwatts
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