Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC634PBF IRC634PBF

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 777003-IRC634PBF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-5 Technology: MOSFET FET Feature: Current Sensing Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Part Status: Obsolete(EOL) Family Name: IRC634 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220-5 Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 770pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 74W (Tc) Rds On (Maximum) @ Id, Vgs: 450 mOhm @ 4.9A, 10V Introduction Date: April 02, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC634PBF - 777003-IRC634PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRC634PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRC634PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 777003-IRC634PBF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-5 Technology: MOSFET FET Feature: Current Sensing Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Part Status: Obsolete(EOL) Family Name: IRC634 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220-5 Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 770pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 74W (Tc) Rds On (Maximum) @ Id, Vgs: 450 mOhm @ 4.9A, 10V Introduction Date: April 02, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC634PBF - 777003-IRC634PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC634PBF
777003-IRC634PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC634PBF 777003-IRC634PBF
Manufacturer: Vishay Siliconix Win Source Part Number: 777003-IRC634PBF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-5 Technology: MOSFET FET Feature: Current Sensing Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Part Status: Obsolete(EOL) Family Name: IRC634 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220-5 Channel Type Type: N Drain Source Voltage: 250V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 770pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 74W (Tc) Rds On (Maximum) @ Id, Vgs: 450 mOhm @ 4.9A, 10V Introduction Date: April 02, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 777003-IRC634PBF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-5
Technology: MOSFET
FET Feature: Current Sensing
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Part Status: Obsolete(EOL)
Family Name: IRC634
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220-5
Channel Type Type: N
Drain Source Voltage: 250V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 770pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 74W (Tc)
Rds On (Maximum) @ Id, Vgs: 450 mOhm @ 4.9A, 10V
Introduction Date: April 02, 2007
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRC634PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRC634PBF-ND
Single FETs, MOSFETs IRC634PBF-ND
N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220-5

N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220-5

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRC634PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRC634PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRC634PBF
MOSFET N-CH 250V 8.1A TO220-5

MOSFET N-CH 250V 8.1A TO220-5

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 777003-IRC634PBF IRC634PBF-ND IRC634PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC634PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 74000 milliwatts
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