Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC530PBF IRC530PBF

Description
Manufacturer: Vishay Win Source Part Number: 1046376-IRC530PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-5 Dimension: TO-220-5 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1046376-IRC530PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-5 Dimension: TO-220-5 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC530PBF - 1046376-IRC530PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC530PBF
1046376-IRC530PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC530PBF 1046376-IRC530PBF
Manufacturer: Vishay Win Source Part Number: 1046376-IRC530PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 88W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-5 Dimension: TO-220-5 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046376-IRC530PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Current Sensing
Polarity: N-Channel
Power Dissipation (Max): 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-5
Dimension: TO-220-5
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
100V 14A TO220 MOSFET Transistor - 278-IRC530PBF - ERSAELECTRONICS PTE. LTD.
Singapore
100V 14A TO220 MOSFET Transistor
278-IRC530PBF
100V 14A TO220 MOSFET Transistor 278-IRC530PBF
MOSFET N-CH 100V 14A TO220-5 Product overview: IRC530PBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 14A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 14A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRC530PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 14A TO220-5 Product overview: IRC530PBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 14A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 14A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRC530PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRC530PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRC530PBF
MOSFET N-CH 100V 14A TO220-5

MOSFET N-CH 100V 14A TO220-5

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046376-IRC530PBF 278-IRC530PBF IRC530PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRC530PBF 100V 14A TO220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 88000 milliwatts 88000 milliwatts
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