The H11D3 is a phototransistor optocoupler with a GaAs infrared emitter and silicon planar phototransistor detector in a DIP-6 package. It features a collector-emitter breakdown voltage of 200 V, an isolation test voltage of 5000 V RMS, and a current transfer ratio of at least 20%. The device meets UL1577, cUL1577, and DIN EN 60747-5-5 (VDE 0884-5) safety standards, with a creepage and clearance distance of at least 7 mm and insulation thickness of at least 0.4 mm. It operates within a temperature range of -55 °C to +100 °C.
Optocoupler 5.3kV Isolation 200V VCEO 60mA IF DIP-6 Product overview: H11D3 from Vishay is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3kV, 200V, 60mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3kV, 200V, 60mA, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11D3 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11D3 |
| Product Name | 5.3kV 200V 60mA DIP Bipolar Transistor |
| IC(max) | 100 milliamps |
