The H11D3-X007 is an optocoupler with a GaAs infrared emitter and silicon phototransistor output, housed in an SMD-6 package with option 7. It features a collector-emitter breakdown voltage of 200 V, a current transfer ratio above 20%, and an isolation test voltage of 5000 V RMS. The device meets UL1577, cUL1577, and DIN EN 60747-5-5 (VDE 0884-5) safety standards, with a creepage and clearance distance of at least 7 mm and insulation thickness of at least 0.4 mm. Operating temperature ranges from -55 °C to +100 °C.
OPTOISO 5.3KV TRANS W/BASE 6SMD Product overview: H11D3-X007 from Vishay Semiconductor - Opto Division is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11D3-X007 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11D3-X007 |
| Product Name | 5.3KV Bipolar Transistor |
| Package Type | Tube |
