The H11D2 is an optocoupler with a GaAs infrared emitter and a silicon phototransistor detector in a plastic DIP-6 package, designed for signal transmission between electrically isolated circuits. It features a collector-emitter breakdown voltage of 300 V, an isolation test voltage of 5000 V RMS, and a current transfer ratio of at least 20%. The device meets UL1577, cUL1577, and DIN EN 60747-5-5 (VDE 0884-5) safety standards, with a creepage and clearance distance of at least 7 mm and an insulation thickness of at least 0.4 mm. Operating temperature ranges from -55 °C to +100 °C.
Transistor Optocoupler, 5.3kV Isolation, 300V VCEO, 100mA Output, PDIP Product overview: H11D2 from Vishay is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3kV, 300V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3kV, 300V, 100mA, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11D2 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11D2 |
| Product Name | 5.3kV 300V 100mA Bipolar Transistor |
| IC(max) | 100 milliamps |
