The CNY65B is a phototransistor optocoupler in a 600 mil DIP-4 HV package with a creepage distance of 14 mm and an insulation thickness of at least 3 mm. It provides a repetitive peak isolation voltage of 1450 V and supports safety isolation per UL/ cUL 1577, VDE 0884-5, IEC 60950, IEC 60065, and IEC 60601. The current transfer ratio ranges from 100% to 200% at an input current of 10 mA and collector-emitter voltage of 5 V. Maximum collector-emitter voltage is 32 V, and forward current is limited to 75 mA. The device operates within an ambient temperature range of -55 °C to +85 °C and meets pollution degree 2 and insulation group IIIa classification with a comparative tracking index of 200.
Optocoupler Phototransistor 13.9kV Isolation, 32V VCEO, 75mA IF, DIP Product overview: CNY65B from Vishay is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 13.9kV, 32V, 75mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 13.9kV, 32V, 75mA, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-CNY65B can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-CNY65B |
| Product Name | 13.9kV 32V 75mA DIP Bipolar Transistor |
| IC(max) | 50 milliamps |
