The CNY65 is a phototransistor optocoupler with a gallium arsenide infrared-emitting diode in a 600 mil DIP-4 HV package, designed for reinforced electrical isolation up to 1450 V peak repetitive voltage. It has a creepage distance of at least 14 mm, clearance of at least 14 mm, and insulation thickness of 3 mm. The part meets safety standards including UL/cUL 1577, VDE 0884-5, IEC 60950, IEC 60065, IEC 60335, and IEC 60601. The current transfer ratio ranges from 63% to 125% at an input current of 10 mA and output voltage of 5 V. Maximum collector current is 50 mA, and collector-emitter breakdown voltage is 32 V. Ambient operating temperature ranges from -55 °C to +85 °C.
1-Ch Transistor Optocoupler, 75mA, 13.9kV Isolation, DIP Product overview: CNY65 from Vishay is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75mA, 13.9kV, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 75mA, 13.9kV, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-CNY65 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-CNY65 |
| Product Name | 75mA 13.9kV DIP Bipolar Transistor |
| IC(max) | 50 milliamps |
