The CNY64B is a phototransistor optocoupler with a gallium arsenide infrared emitter in a 4-pin DIP package, offering 1450 V repetitive peak isolation voltage and 3 mm thickness of insulation. It has a current transfer ratio of 100% to 200% at 10 mA forward current and 5 V collector-emitter voltage. The device meets safety standards including UL/cUL 1577, VDE 0884-5, IEC 60065, IEC 60950, and IEC 60601, with creepage and clearance distances of 9.5 mm. It is rated for an ambient temperature range of -55 °C to +85 °C and has a maximum collector current of 50 mA.
Optocoupler 8.2kV Isolation 75mA CTR 200% DIP Product overview: CNY64B from Vishay is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8.2kV, 75mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 8.2kV, 75mA, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-CNY64B can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-CNY64B |
| Product Name | 8.2kV 75mA DIP Bipolar Transistor |
| IC(max) | 50 milliamps |
