Vishay Intertechnology, Inc. PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4 BPV11F

Description
PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4
  • PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4 - 70026405 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Description
PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4

Suppliers

Company
Product
Description
Supplier Links
PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4 - 70026405 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4
70026405
PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4 70026405
PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4

PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4

Supplier's Site

Technical Specifications

  Allied Electronics, Inc.
Product Category Photodiodes
Product Number 70026405
Product Name PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4
Unlock Full Specs
to access all available technical data

Similar Products

Si APDs - S3884 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Si APDs
S3884
Specs
Photodiode Type Avalanche Photodiode
Spectral Response Range 400 to 1000 nm (4000 to 10000 Å)
Peak Sensitivity Wavelength 800 nm (8000 Å)
View Details
2 suppliers
Photodiodes - 2121833 - RS Components, Ltd.
RS Components, Ltd.
Photodiodes
2121833
Specs
Photodiode Spectral Response IR
Peak Sensitivity Wavelength 5000 nm (50000 Å)
Photodiode Package Ceramic
View Details
Integrating Sphere Detector, Diverging Beam, 2.0 in., 800-1650 nm - 819D-IG-2-CAL2 - Newport MKS
Newport MKS
Integrating Sphere Detector, Diverging Beam, 2.0 in., 800-1650 nm
819D-IG-2-CAL2
Specs
Spectral Response Range 800 to 1650 nm (8000 to 16500 Å)
View Details
Clairex Technologies, Inc.
Silicon Photodiodes
CLD156
Specs
Photodiode Material Silicon
Photodiode Package Leaded
Active Area Diameter or Length 3.1 mm (0.1220 inch)
View Details