The 4N33 is an optocoupler with a gallium arsenide infrared LED and a silicon photodarlington output, featuring a base connection for improved switching control. It is available in a standard 400 mil DIP-6 package or SMD-6 surface-mount options, with a creepage and clearance distance of 8 mm for the 400 mil DIP variant. The device achieves a minimum current transfer ratio of 500 % at an LED current of 10 mA and collector-emitter voltage of 10 V. Operating temperature ranges from -55 °C to +100 °C. It meets UL, BSI, and FIMKO safety approvals, and complies with DIN EN 60747-5-2 and IEC 60950 for reinforced insulation. The maximum collector current is 100 mA, with a collector-emitter breakdown voltage of 30 V. The isolation test voltage is 5300 V RMS, and isolation resistance is 10¹¹ Ω at 100 °C.
OPTOISO 5.3KV DARL W/BASE 6SMD Product overview: 4N33-X009 from Vishay Semiconductor - Opto Division is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N33-X009 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N33-X009 |
| Product Name | 5.3KV Bipolar Transistor |
| Package Type | Tube |
