The 4N32-X001 is an optocoupler with a gallium arsenide infrared LED and a silicon photodarlington output, housed in a DIP-6 package measuring 7.62 mm pitch and 8.6 mm body width. It provides 5300 V RMS isolation, with a minimum current transfer ratio of 500% at 10 mA LED current and 10 V collector-emitter voltage. The device meets UL1577, DIN EN 60747-5-2 (VDE 0884), BSI IEC 60950, and IEC 60065 safety standards, and is rated for operation from -55 °C to +100 °C. The 4N32-X001 variant is certified for VDE, UL, BSI, and FIMKO compliance.
OPTOISO 5.3KV DARL W/BASE 6DIP Product overview: 4N32-X001 from Vishay Semiconductor - Opto Division is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N32-X001 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N32-X001 |
| Product Name | 5.3KV Bipolar Transistor |
| Package Type | Tube |
