Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3N163 3N163

Description
Manufacturer: Vishay Win Source Part Number: 006139-3N163 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 375mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 20V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-72 Dimension: TO-206AF, TO-72-4 Metal Can Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50mA (Ta) Gate-Source Threshold Voltage: 5V @ 10μA Max Input Capacitance: 3.5pF @ 15V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 250 Ohm @ 100μA, 20V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 006139-3N163 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 375mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 20V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-72 Dimension: TO-206AF, TO-72-4 Metal Can Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50mA (Ta) Gate-Source Threshold Voltage: 5V @ 10μA Max Input Capacitance: 3.5pF @ 15V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 250 Ohm @ 100μA, 20V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3N163 - 006139-3N163 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3N163
006139-3N163
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3N163 006139-3N163
Manufacturer: Vishay Win Source Part Number: 006139-3N163 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 375mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 20V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-72 Dimension: TO-206AF, TO-72-4 Metal Can Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50mA (Ta) Gate-Source Threshold Voltage: 5V @ 10μA Max Input Capacitance: 3.5pF @ 15V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 250 Ohm @ 100μA, 20V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 006139-3N163
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 375mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 20V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-72
Dimension: TO-206AF, TO-72-4 Metal Can
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50mA (Ta)
Gate-Source Threshold Voltage: 5V @ 10μA
Max Input Capacitance: 3.5pF @ 15V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 250 Ohm @ 100μA, 20V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 3N163-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3N163-ND
Single FETs, MOSFETs 3N163-ND
P-Channel 40V 50mA (Ta) 375mW (Ta) Through Hole TO-72

P-Channel 40V 50mA (Ta) 375mW (Ta) Through Hole TO-72

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 3N163 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
3N163
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 3N163
MOSFET P-CH 40V 50MA TO72

MOSFET P-CH 40V 50MA TO72

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 006139-3N163 3N163-ND 3N163
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3N163 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 40 volts
PD 375 milliwatts
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