The 2N7002K-T1-E3 is an N-Channel MOSFET designed for various applications, including power management and industrial uses. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 300mA at 25¬8C. The device has a low on-resistance of 2Oc at a gate-source voltage of 10V, making it suitable for efficient switching applications. The gate threshold voltage is specified at 2.5V, allowing for low-voltage operation. This MOSFET is packaged in a SOT-23 form factor, which is suitable for surface mount technology. It has a maximum power dissipation of 350mW at 25¬8C and operates within a temperature range of -55¬8C to 150¬8C. The total gate charge is low at 0.4nC, contributing to fast switching speeds, with turn-on and turn-off times of 25ns and 35ns, respectively. The device also offers 2000V ESD protection, enhancing its reliability in various applications. Overall, the 2N7002K-T1-E3 is a versatile and reliable choice for engineers looking for a compact MOSFET with good performance characteristics.
Manufacturer: Vishay
Win Source Part Number: 005723-2N7002K-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Family Name: 2N7002K
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 300mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 30pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): 2N7002K; DMN601K; DMN601K-7-F; DMN601K7;
Introduction Date: August 09, 2001
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
N-Channel MOSFET, 60V, 300mA, 2R Rds(on), SOT-23 Product overview: 2N7002K-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 300mA, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 300mA, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002K-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 300MA SOT23-3
N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
60V 300mA 350mW 2Ω@500mA,10V 2.5V@250uA null SOT-23-3 MOSFETs ROHS
MOSFET N-CH 60V 300MA SOT23-3
N CHANNEL MOSFET, 60V, 0.5A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:500mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, N CHANNEL, 60V, 2OHM, 300mA, TO-236, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:350mW RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 005723-2N7002K-T1-E3 | 278-2N7002K-T1-E3 | 2N7002K-T1-E3 | 742-2N7002K-T1-E3CT-ND | 2N7002K-T1-E3 | 2N7002K-T1-E3 | 2N7002K-T1-E3 | 06J8894 | 73W9426 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002K-T1-E3 | N-Channel 60V 300mA SOT-23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 60V, 0.5A, Sot-23; Channel Type Vishay | Mosfet, N Channel, 60V, 2Ohm, 300Ma, To-236, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| PD | 350 milliwatts | 200 milliwatts | 350 milliwatts | 350 milliwatts | 350 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | 0.6 nC @ 4.5 V | TO-3; SOT23 | TO-3 |
