Manufacturer: Vishay
Win Source Part Number: 075349-2N7002E-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 240mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 21pF @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
N-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount TO-236
N-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount TO-236
N-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount TO-236
MOSFET N-CH 60V 240MA TO236
SOT-23-3 MOSFETs ROHS
MOSFET N-CH 60V 240MA TO236
MOSFET 60V 240mA 0.35W 3.0ohm @ 10V
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 075349-2N7002E-T1-GE3 | 2N7002E-T1-GE3TR-ND | 2N7002E-T1-GE3 | 17930-2N7002E-T1-GE3 | 2N7002E-T1-GE3 | 2N7002E-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002E-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | SOT-23-3 MOSFETs ROHS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | ||||
| PD | 350 milliwatts | 350 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |