Vishay Intertechnology, Inc. Single FETs, MOSFETs 2N7002-T1-GE3

Description
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236
Request a Quote Datasheet
Description
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 2N7002-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002-T1-GE3DKR-ND
Single FETs, MOSFETs 2N7002-T1-GE3DKR-ND
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002-T1-GE3TR-ND
Single FETs, MOSFETs 2N7002-T1-GE3TR-ND
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002-T1-GE3CT-ND
Single FETs, MOSFETs 2N7002-T1-GE3CT-ND
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002-T1-GE3 - 1004067-2N7002-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002-T1-GE3
1004067-2N7002-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002-T1-GE3 1004067-2N7002-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1004067-2N7002-T1-GE 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 115mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Input Capacitance: 50pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1004067-2N7002-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 115mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2N7002-T1-GE3
Single FETs, MOSFETs 2N7002-T1-GE3
MOSFET N-CH 60V 115MA TO236

MOSFET N-CH 60V 115MA TO236

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002-T1-GE3
MOSFET N-CH 60V 115MA TO236

MOSFET N-CH 60V 115MA TO236

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V 115mA 0.2W 7.5ohm @ 10V

MOSFET 60V 115mA 0.2W 7.5ohm @ 10V

Buy Now Datasheet
Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R - 880-2N7002-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R
880-2N7002-T1-GE3
Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R 880-2N7002-T1-GE3
Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R

Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2N7002-T1-GE3DKR-ND 1004067-2N7002-T1-GE3 2N7002-T1-GE3 2N7002-T1-GE3 2N7002-T1-GE3 880-2N7002-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; TO-236 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
V(BR)DSS 60 volts 60 volts 60 volts
PD 200 milliwatts 200 milliwatts 200 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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