Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002-T1-GE3 2N7002-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1004067-2N7002-T1-GE 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 115mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Input Capacitance: 50pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1004067-2N7002-T1-GE 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 115mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Input Capacitance: 50pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002-T1-GE3 - 1004067-2N7002-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002-T1-GE3
1004067-2N7002-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002-T1-GE3 1004067-2N7002-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1004067-2N7002-T1-GE 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 115mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Input Capacitance: 50pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1004067-2N7002-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 115mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
N-Channel MOSFET Transistor
278-2N7002-T1-GE3
N-Channel MOSFET Transistor 278-2N7002-T1-GE3
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Product overview: 2N7002-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002-T1-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Product overview: 2N7002-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2N7002-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2N7002-T1-GE3
Single FETs, MOSFETs 2N7002-T1-GE3
MOSFET N-CH 60V 115MA TO236

MOSFET N-CH 60V 115MA TO236

Supplier's Site Datasheet
Single FETs, MOSFETs - 2N7002-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002-T1-GE3DKR-ND
Single FETs, MOSFETs 2N7002-T1-GE3DKR-ND
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002-T1-GE3TR-ND
Single FETs, MOSFETs 2N7002-T1-GE3TR-ND
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002-T1-GE3CT-ND
Single FETs, MOSFETs 2N7002-T1-GE3CT-ND
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

Buy Now Datasheet
Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R - 880-2N7002-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R
880-2N7002-T1-GE3
Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R 880-2N7002-T1-GE3
Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R

Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V 115mA 0.2W 7.5ohm @ 10V

MOSFET 60V 115mA 0.2W 7.5ohm @ 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002-T1-GE3
MOSFET N-CH 60V 115MA TO236

MOSFET N-CH 60V 115MA TO236

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1004067-2N7002-T1-GE3 278-2N7002-T1-GE3 2N7002-T1-GE3 2N7002-T1-GE3DKR-ND 880-2N7002-T1-GE3 2N7002-T1-GE3 2N7002-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002-T1-GE3 N-Channel MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 200 milliwatts 200 milliwatts 200 milliwatts 200 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; TO-236 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
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