Manufacturer: Vishay
Win Source Part Number: 005731-2N7002-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Family Name: 2N7002
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 115mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): 2N7002-L99Z; 2N7002-F40; 2N7002-NF40; 2N7002T;
Introduction Date: April 11, 1998
ECCN: EAR99
Country of Origin: China, Thailand
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236
MOSFET N-CH 60V 115MA TO236
MOSFET N-CH 60V 115MA TO236
N CHANNEL MOSFET, 60V, 115mA TO-236; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:115mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 115mA TO-236, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:115mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:200mW RoHS Compliant: Yes
VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 005731-2N7002-T1-E3 | 2N7002-T1-E3DKR-ND | 2N7002-T1-E3 | 2N7002-T1-E3 | 06J8892 | 79R7745 | 880-2N7002-T1-E3 | 2N7002-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 60V, 115Ma To-236; Channel Type Vishay | N Channel Mosfet, 60V, 115Ma To-236, Full Reel; Channel Type Vishay | VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 200 milliwatts | 200 milliwatts | 200 milliwatts | 200 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; SOT23; TO-236 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3 |
