Manufacturer: Vishay
Win Source Part Number: 131527-2N6661JAN02
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-39
Dimension: TO-205AD, TO-39-3 Metal Can
Drain-Source Breakdown Voltage: 90V
Continuous Drain Current at 25°C: 860mA (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 20
N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
MOSFET N-CH 90V 860MA TO39
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 131527-2N6661JAN02 | 2N6661JAN02-ND | 2N6661JAN02 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N6661JAN02 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 90 volts | ||
| PD | 725 to 6250 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) |
