Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N6661JAN02 2N6661JAN02

Manufacturer: Vishay
Win Source Part Number: 131527-2N6661JAN02
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-39
Dimension: TO-205AD, TO-39-3 Metal Can
Drain-Source Breakdown Voltage: 90V
Continuous Drain Current at 25°C: 860mA (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 20

N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

MOSFET N-CH 90V 860MA TO39 Product overview: 2N6661JAN02 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 90V, 860MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 90V, 860MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N6661JAN02 can be used for catalog matching and distributor lookup.