Vishay Intertechnology, Inc. Single FETs, MOSFETs 2N6661JAN02

Description
N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
Request a Quote Datasheet
Description
N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 2N6661JAN02-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N6661JAN02-ND
Single FETs, MOSFETs 2N6661JAN02-ND
N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N6661JAN02 - 131527-2N6661JAN02 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N6661JAN02
131527-2N6661JAN02
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N6661JAN02 131527-2N6661JAN02
Manufacturer: Vishay Win Source Part Number: 131527-2N6661JAN02 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-39 Dimension: TO-205AD, TO-39-3 Metal Can Drain-Source Breakdown Voltage: 90V Continuous Drain Current at 25°C: 860mA (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 50pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Quantity per package: 20

Manufacturer: Vishay
Win Source Part Number: 131527-2N6661JAN02
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-39
Dimension: TO-205AD, TO-39-3 Metal Can
Drain-Source Breakdown Voltage: 90V
Continuous Drain Current at 25°C: 860mA (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 20

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N6661JAN02 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N6661JAN02
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N6661JAN02
MOSFET N-CH 90V 860MA TO39

MOSFET N-CH 90V 860MA TO39

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2N6661JAN02-ND 131527-2N6661JAN02 2N6661JAN02
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N6661JAN02 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-39; TO-205AD, TO-39-3 Metal Can TO-3; TO-39; SOT3; TO-39 TO-39; TO-205AD, TO-39-3 Metal Can
Transistor Grade / Operating Range Military
V(BR)DSS 90 volts
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