Vishay Intertechnology, Inc. Single FETs, MOSFETs 2N6661

Description
N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
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Description
N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
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Datasheet
Datasheet Summary
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N-Channel 90 V MOSFET in a TO-205AD (TO-39) package for high-reliability applications, with a drain-source on-state resistance of 3.6 Ω at V₁₃ = 10 V, a threshold voltage of 1.6 V, and a continuous drain current of 0.86 A at Tₓ = 25 °C. It features low input capacitance of 35 pF, fast switching times of 6 ns, and is military qualified to meet reliability standards. The device supports direct logic-level interfacing and operates with a junction temperature range of -55 °C to 150 °C.

Datasheet Summary
Powered by GS/AI

N-Channel 90 V MOSFET in a TO-205AD (TO-39) package for high-reliability applications, with a drain-source on-state resistance of 3.6 Ω at V₁₃ = 10 V, a threshold voltage of 1.6 V, and a continuous drain current of 0.86 A at Tₓ = 25 °C. It features low input capacitance of 35 pF, fast switching times of 6 ns, and is military qualified to meet reliability standards. The device supports direct logic-level interfacing and operates with a junction temperature range of -55 °C to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 2N6661-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N6661-ND
Single FETs, MOSFETs 2N6661-ND
N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 2N6661-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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