Vishay Precision Group Single FETs, MOSFETs 2N6660

Description
N-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
Request a Quote Datasheet
Description
N-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 2N6660-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N6660-ND
Single FETs, MOSFETs 2N6660-ND
N-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)

N-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)

Buy Now Datasheet
Discrete Semiconductor Products - 153124-2N6660 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
153124-2N6660
Discrete Semiconductor Products 153124-2N6660
Manufacturer: Vishay Semiconductor Diodes Division Win Source Part Number: 153124-2N6660 Category: Discrete Semiconductor Products Family: FETs - Single Family Name: 2N6660 Alternative Parts (Cross-Reference): 2N6660-G; Introduction Date: August 07, 2001 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial, Motor Drive & Control

Manufacturer: Vishay Semiconductor Diodes Division
Win Source Part Number: 153124-2N6660
Category: Discrete Semiconductor Products
Family: FETs - Single
Family Name: 2N6660
Alternative Parts (Cross-Reference): 2N6660-G;
Introduction Date: August 07, 2001
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial, Motor Drive & Control

Buy Now
Mosfet; Channel Type Vishay - 13C2019 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet; Channel Type Vishay
13C2019
Mosfet; Channel Type Vishay 13C2019
MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:6.25W; MSL:- RoHS Compliant: No

MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:6.25W; MSL:- RoHS Compliant: No

Supplier's Site
Single FETs, MOSFETs - 2N6660 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2N6660
Single FETs, MOSFETs 2N6660
MOSFET N-CH 60V 990MA TO205AD

MOSFET N-CH 60V 990MA TO205AD

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2N6660-ND 153124-2N6660 13C2019 2N6660
Product Name Single FETs, MOSFETs Discrete Semiconductor Products Mosfet; Channel Type Vishay Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-205AD, TO-39-3 Metal Can SOT3 TO-3 TO-39; TO-205AD, TO-39-3 Metal Can
IDSS 1100 milliamps 990 milliamps
PD 6250 milliwatts 725 milliwatts
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