Vishay Precision Group Mosfet; Channel Type Vishay 2N6659-E3

Description
MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:35V; Continuous Drain Current Id:1.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:6.25W RoHS Compliant: Yes
  • Mosfet; Channel Type Vishay - 06J8888 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:35V; Continuous Drain Current Id:1.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:6.25W RoHS Compliant: Yes

Suppliers

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Mosfet; Channel Type Vishay - 06J8888 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet; Channel Type Vishay
06J8888
Mosfet; Channel Type Vishay 06J8888
MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:35V; Continuous Drain Current Id:1.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:6.25W RoHS Compliant: Yes

MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:35V; Continuous Drain Current Id:1.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:6.25W RoHS Compliant: Yes

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Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 06J8888
Product Name Mosfet; Channel Type Vishay
IDSS 1400 milliamps
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