The 2N5663 is an NPN silicon power transistor in a TO-5 package, designed for switching and amplification in high-voltage applications. It has a collector-emitter voltage rating of 300 Vdc, a collector current rating of 2.0 Adc, and a total power dissipation of 1.0 W at +25°C, derating linearly at 5.7 mW/°C above that temperature. Thermal resistance from junction to case is 6.7 °C/W. The transistor meets MIL-PRF-19500/454 qualification standards. Its forward current transfer ratio ranges from 25 to 75 at collector currents of 0.5 A to 1.0 A and collector-emitter voltage of 5.0 Vdc. Collector-emitter saturation voltage is 0.8 Vdc at a collector current of 2.0 A and base current of 0.4 A. It has a turn-off time of 1.2 µs under specified switching conditions. The device is qualified under MIL-PRF-19500/454.
TRANS 300V 1A TO5 Product overview: 2N5663 from General Semiconductor (Vishay) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 300V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5663 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N5663 |
| Product Name | 300V 1A Bipolar Transistor |
| Package Type | Bulk |
