Vishay Precision Group Discrete Semiconductor Products - Transistors - JFETs 2N4338-E3

Win Source Part Number: 1188070-2N4338-E3
Category: Discrete Semiconductor Products>Transistors - JFETs
Package: Bulk
Standard Package: 200
FET Type: N-Channel
Power - Max: 300 mW
Voltage - Breakdown (V(BR)GSS): 50 V
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 nA
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): 2N4338-E3.; 2N4338E3;
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Base Product Number: 2N4338
Product Status: Obsolete

MOSFET N-CH 50V 600UA TO-206AA

Transistor Product overview: 2N4338-E3 from Vishay is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2N4338-E3 can be used for catalog matching and distributor lookup.