VBsemi Electronics Co. Ltd. Transistors VBQF1306

Description
30V 40A 6W 4.5mΩ@10V,40A 3V@250uA 1 N-Channel DFN-8(3x3) MOSFETs ROHS
  • Transistors - VBQF1306 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 40A 6W 4.5mΩ@10V,40A 3V@250uA 1 N-Channel DFN-8(3x3) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBQF1306 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBQF1306
Transistors VBQF1306
30V 40A 6W 4.5mΩ@10V,40A 3V@250uA 1 N-Channel DFN-8(3x3) MOSFETs ROHS

30V 40A 6W 4.5mΩ@10V,40A 3V@250uA 1 N-Channel DFN-8(3x3) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBQF1306
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 220709140 - Radwell International
Fuji Electric Corp. of America
IGBT
7MBP50VFN060-50
Specs
Transistor Type IGBT
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-40W,115 - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA NPN general-purpose transistors
BC817-40W,115
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
9 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R020M1H - AIMDQ75R020M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R020M1H
AIMDQ75R020M1H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1180A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E1K1
Specs
Transistor Type IGBT
View Details