VBsemi Electronics Co. Ltd. Transistors VBPB165R20S

Description
650V 20A 160mΩ@10V 4.5V 1 N-Channel TO-3P MOSFETs ROHS
  • Transistors - VBPB165R20S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
650V 20A 160mΩ@10V 4.5V 1 N-Channel TO-3P MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBPB165R20S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBPB165R20S
Transistors VBPB165R20S
650V 20A 160mΩ@10V 4.5V 1 N-Channel TO-3P MOSFETs ROHS

650V 20A 160mΩ@10V 4.5V 1 N-Channel TO-3P MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBPB165R20S
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

CSD17501Q5A 30V, N-Channel NexFET? Power MOSFET with 20 Volt Vgs - CSD17501Q5A - Texas Instruments
Texas Instruments
CSD17501Q5A 30V, N-Channel NexFET? Power MOSFET with 20 Volt Vgs
CSD17501Q5A
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
7 suppliers
45 V, 500 mA NPN general-purpose transistors - BC817-16,235 - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA NPN general-purpose transistors
BC817-16,235
Specs
Transistor Type BJT
Package Type

-
View Details
7 suppliers
DC - 20 GHz, 400 um Discrete GaAs pHEMT Die - QPD2040D - Qorvo
Qorvo
DC - 20 GHz, 400 um Discrete GaAs pHEMT Die
QPD2040D
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 400 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1352E - 855029-2SA1352E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1352E
2SA1352E
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details