VBsemi Electronics Co. Ltd. Transistors VBMB1101M

Description
100V 18A 86mΩ@10V,100A 48W 3V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS
Description
100V 18A 86mΩ@10V,100A 48W 3V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBMB1101M - ODG (Origin Data Global)
Shenzhen, China
Transistors
VBMB1101M
Transistors VBMB1101M
100V 18A 86mΩ@10V,100A 48W 3V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS

100V 18A 86mΩ@10V,100A 48W 3V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBMB1101M
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Fuji Electric Corp. of America
Specs
Transistor Type Bipolar RF
View Details
PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR - ALD210800PCL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP16
View Details
4 suppliers
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Bipolar Transistors - 1689655 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity PNP
Package Type E-line
View Details