VBsemi Electronics Co. Ltd. Transistors VBMB1101M

Description
100V 18A 86mΩ@10V,100A 48W 3V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS
Description
100V 18A 86mΩ@10V,100A 48W 3V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBMB1101M - ODG (Origin Data Global)
Shenzhen, China
Transistors
VBMB1101M
Transistors VBMB1101M
100V 18A 86mΩ@10V,100A 48W 3V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS

100V 18A 86mΩ@10V,100A 48W 3V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBMB1101M
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 19567903 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-25W,135 - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
5 suppliers
Single FETs, MOSFETs - 94-2989-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
View Details
2 suppliers
Transistor - 4733929 - Radwell International
Allen-Bradley / Rockwell Automation
View Details