VBsemi Electronics Co. Ltd. Transistors VBM165R12S

Description
650V 12A 360mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS
Description
650V 12A 360mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBM165R12S - ODG (Origin Data Global)
Shenzhen, China
Transistors
VBM165R12S
Transistors VBM165R12S
650V 12A 360mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS

650V 12A 360mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBM165R12S
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 33968092 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
Single Bipolar Transistors - BC817-25/SNVL-ND - DigiKey
Specs
Polarity NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3
View Details
3 suppliers
Infineon Technologies AG
Specs
Transistor Type MOSFET
View Details
Transistor - 21974632 - Radwell International
Allen-Bradley / Rockwell Automation
View Details