VBsemi Electronics Co. Ltd. Transistors VBL165R18

Description
650V 18A 208W 360mΩ@10V,11A 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - VBL165R18 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
650V 18A 208W 360mΩ@10V,11A 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBL165R18 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBL165R18
Transistors VBL165R18
650V 18A 208W 360mΩ@10V,11A 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS

650V 18A 208W 360mΩ@10V,11A 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBL165R18
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 19567903 - Radwell International
Fuji Electric Corp. of America
IGBT Module
7MBR10NF120
Specs
Transistor Type IGBT
View Details
Qorvo
RF JFET Transistors
TGF2953
Specs
Transistor Type JFET
View Details
CSD16323Q3C Dual Cool N-Channel NexFET Power MOSFET - CSD16323Q3C - Texas Instruments
Texas Instruments
CSD16323Q3C Dual Cool N-Channel NexFET Power MOSFET
CSD16323Q3C
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON3x3 Dual Cool
View Details
4 suppliers
650A Igbt Module For One Phase 400/480V - SK-H1-QOUT-D650 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
650A Igbt Module For One Phase 400/480V
SK-H1-QOUT-D650
Specs
Transistor Type IGBT
View Details