VBsemi Electronics Co. Ltd. Transistors VBI1101M

Description
100V 4.2A 125mΩ@4.5V,1A 2.5W 3V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS
  • Transistors - VBI1101M - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 4.2A 125mΩ@4.5V,1A 2.5W 3V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS
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Transistors - VBI1101M - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBI1101M
Transistors VBI1101M
100V 4.2A 125mΩ@4.5V,1A 2.5W 3V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS

100V 4.2A 125mΩ@4.5V,1A 2.5W 3V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBI1101M
Product Name Transistors
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