VBsemi Electronics Co. Ltd. Transistors VBI1101M

Description
100V 4.2A 125mΩ@4.5V,1A 2.5W 3V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS
Description
100V 4.2A 125mΩ@4.5V,1A 2.5W 3V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBI1101M - ODG (Origin Data Global)
Shenzhen, China
Transistors
VBI1101M
Transistors VBI1101M
100V 4.2A 125mΩ@4.5V,1A 2.5W 3V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS

100V 4.2A 125mΩ@4.5V,1A 2.5W 3V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBI1101M
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 443989 - Radwell International
Fuji Electric Corp. of America
View Details
80 V, 500 mA PNP general-purpose transistors - BC806-25-QVL - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
Transistor Grade / Operating Range Automotive
View Details
Infineon Technologies AG
Specs
Transistor Type IGBT
View Details
590A IGBT MODULE FOR ONE PHASE 400/480V - SK-H1-QOUT-D590 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details