VBsemi Electronics Co. Ltd. Transistors VBE2309

Description
30V 80A 13mΩ@10V,30A 187W 3V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
  • Transistors - VBE2309 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 80A 13mΩ@10V,30A 187W 3V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

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Transistors - VBE2309 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE2309
Transistors VBE2309
30V 80A 13mΩ@10V,30A 187W 3V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

30V 80A 13mΩ@10V,30A 187W 3V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE2309
Product Name Transistors
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