VBsemi Electronics Co. Ltd. Transistors VBE16R12S

Description
600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - VBE16R12S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

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Description
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Transistors - VBE16R12S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE16R12S
Transistors VBE16R12S
600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE16R12S
Product Name Transistors
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