VBsemi Electronics Co. Ltd. Transistors VBE16R12S

Description
600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - VBE16R12S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBE16R12S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE16R12S
Transistors VBE16R12S
600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

600V 12A 340mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE16R12S
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

80 V, 1 A PNP medium power transistors - BC53PAST-QX - Nexperia B.V.
Nexperia B.V.
80 V, 1 A PNP medium power transistors
BC53PAST-QX
Specs
Package Type SOT1061D SOT1061D
View Details
2 suppliers
GaAs Fet Switches - KS205 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS205
View Details
RF FETs, MOSFETs - 2312-QPD0030CT-ND - DigiKey
Qorvo
RF FETs, MOSFETs
QPD0030
Specs
Package Type 20-VFQFN Exposed Pad
View Details
2 suppliers
Single FETs, MOSFETs - 448-AIMZHN120R060M1TXKSA1-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMZHN120R060M1TXKSA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-247; TO-247-4
View Details