VBsemi Electronics Co. Ltd. Transistors VBE1410

Description
40V 55A 100W 14mΩ@4.5V,37A 2.5V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
  • Transistors - VBE1410 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
40V 55A 100W 14mΩ@4.5V,37A 2.5V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBE1410 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE1410
Transistors VBE1410
40V 55A 100W 14mΩ@4.5V,37A 2.5V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS

40V 55A 100W 14mΩ@4.5V,37A 2.5V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE1410
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1333320 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1333320
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type Powerdi3333
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
GaAs Fet Switches - KCB821 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KCB821
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA2014-TD-E - 855067-2SA2014-TD-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA2014-TD-E
2SA2014-TD-E
Specs
Package Type SOT3
View Details